| PART |
Description |
Maker |
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
| RJP60F0DPM RJP60F0DPM-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH6086BDPK RJH6086BDPK-15 |
600 V - 45 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F0DPE RJP60F0DPE-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| FGH20N60SFD FGH20N60SFDTU |
600V, 20A Field Stop IGBT
40 A, 600 V, N-CHANNEL IGBT, TO-247AB ROHS COMPLIANT PACKAGE-3
High current capability, High input impedance
|
http://
Fairchild Semiconductor, Corp.
List of Unclassifed Manufacturers
|
| CM30TF-12H |
122 x 32 pixel format, LED Backlight available 30 A, 600 V, N-CHANNEL IGBT
Six-IGBT IGBTMOD 30 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| RJH60F5DPQ-A0-15 |
600 V - 40 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| SGS23N60UFD SGS23N60UFDTU |
High speed switching
Ultra-Fast IGBT
Discrete, High Performance IGBT with Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
